2N5883 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(25A,200W)

2N5883 2N5884 PNP
2N5885 2N5886 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5883, 2N5885
series types are complementary silicon epitaxial base
transistors designed for power amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
CContinuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
_JC
2N5883
2N5885
2N5884
2N5886
60
80
60
80
5.0
25
50
7.5
200
-65 to +200
0.875
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
ICEO
VCB=Rated VCBO
VCE=½Rated VCEO
ICEX
VCE=Rated VCEO, VBE=1.5V
ICEX
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=5.0V
BVCEO IC=200mA (2N5883, 2N5885)
60
BVCEO IC=200mA (2N5884, 2N5886)
80
VCE(SAT) IC=15A, IB=1.5A
VCE(SAT) IC=25A, IB=6.25A
VBE(SAT) IC=25A, IB=6.25A
VBE(ON) VCE=4.0V, IC=10A
hFE
VCE=4.0V, IC=3.0A
35
hFE
VCE=4.0V, IC=10A
20
hFE
VCE=4.0V, IC=25A
4.0
fT
VCE=10V, IC=1.0A, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=1.0MHz (2N5883, 2N5885)
Cob
VCB=10V, IE=0, f=1.0MHz (2N5884, 2N5886)
hfe
VCE=4.0V, IC=3.0A, f=1.0kHz
20
tr
VCC=30V, IC=10A, IB1=IB2=1.0A
ts
VCC=30V, IC=10A, IB1=IB2=1.0A
tf
VCC=30V, IC=10A, IB1=IB2=1.0A
MAX
1.0
2.0
1.0
10
1.0
1.0
4.0
2.5
1.5
100
1000
500
0.7
1.0
0.8
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
pF
pF
μs
μs
μs
R1 (4-December 2012)