2N5820 Datasheet, PDF (1/2 Pages) Micro Electronics – COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS

2N5820 2N5822 NPN
2N5821 2N5823 PNP
COMPLEMENTARY
SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5820 series
types are epoxy molded complementary silicon
small signal transistors manufactured by the
epitaxial planar process designed for general
purpose amplifier applications where a high
collector current rating is required.
TO-92-18R CASE
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
IC
Peak Collector Current
ICM
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
70
70
60
5.0
750
1.0
625
1.5
-65 to +150
200
83.3
UNITS
V
V
V
V
mA
A
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5820
2N5821
SYMBOL
ICBO
ICBO
IEBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
TEST CONDITIONS
VCB=25V
VCB=25V, TA=100°C
VEB=5.0V
IC=10µA
IC=10mA
IE=10µA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=2.0mA
VCE=2.0V, IC=500mA
MIN MAX
100
15
10
70
60
5.0
0.75
1.2
0.60
1.1
60
120
20
2N5822
2N5823
MIN MAX
100
15
10
70
60
5.0
0.75
1.2
0.60
1.1
100
250
25
UNITS
nA
µA
µA
V
V
V
V
V
V
R1 (21-October 2005)