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2N5769_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR
2N5769
PN2369A
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5769 and
PN2369A are epitaxial planar NPN Silicon Transistors
designed for ultra high speed saturated switching
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
40
40
15
4.5
200
500
350
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=20V
ICBO
VCB=20V, TA=125°C
ICES
VCE=20V (2N5769)
IEBO
VEB=4.5V (2N5769)
BVCBO
IC=10µA
40
BVCES
IC=10µA
40
BVCEO
IC=10mA
15
BVEBO
IE=10µA
4.5
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=30mA, IB=3.0mA
VCE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=10mA, IB=1.0mA
700
VBE(SAT) IC=30mA, IB=3.0mA
VBE(SAT) IC=100mA, IB=10mA
hFE
VCE=0.35V, IC=10mA (2N5769)
40
hFE
VCE=1.0V, IC=10mA (PN2369A)
40
hFE
VCE=0.4V, IC=30mA
30
hFE
VCE=1.0V, IC=100mA
20
MAX
400
30
400
1.0
200
250
500
850
1.15
1.6
120
120
UNITS
V
V
V
V
mA
mA
mW
°C
UNITS
nA
µA
nA
µA
V
V
V
V
mV
mV
mV
mV
V
V
R1 (10-March 2011)