2N5193_09 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON POWER TRANSISTORS

2N5193
2N5194
2N5195
Central^TM
Semiconductor Corp.
PNP SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5193 Series
types are Silicon PNP Power Transistors, manufactured
by the epitaxial base process, designed for medium
power amplifier and switching applications.
These devices are complementary to the NPN 2N5190
Series types.
TO-126 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance (Junction to Case)
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ_JC
2N5193
40
40
2N5194
60
60
5.0
4.0
1.0
40
-65 to +150
3.12
2N5195
80
80
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEX
ICEO
VCE=Rated VCEO, VEB=1.5V
VCE=Rated VCEO
IEBO
VEB=5.0V
BVCEO
IC=100mA (2N5193)
40
BVCEO
IC=100mA (2N5194)
60
BVCEO
IC=100mA (2N5195)
80
VCE(SAT)
VCE(SAT)
IC=1.5A, IB=150mA
IC=4.0A, IB=1.0A
VBE(ON)
VCE=2.0V, IC=1.5A
hFE
VCE=2.0V, IC=1.5A (2N5193, 2N5194)
25
hFE
VCE=2.0V, IC=1.5A (2N5195)
20
hFE
VCE=2.0V, IC=4.0A (2N5193, 2N5194)
10
hFE
VCE=2.0V, IC=4.0A (2N5195)
7.0
fT
VCE=10V, IC=1.0A, f=1.0MHz
2.0
MAX
100
100
1.0
1.0
0.6
1.4
1.2
100
80
UNITS
μA
μA
mA
mA
V
V
V
V
V
V
MHz
R1 (10-February 2009)