2N4904_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – COMPLEMENTARY SILICON POWER TRANSISTORS

2N4904 2N4905 2N4906 PNP
2N4913 2N4914 2N4915 NPN
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4904, 2N4913
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
_JC
2N4904
2N4913
40
2N4905
2N4914
60
2N4906
2N4915
80
40
60
80
5.0
5.0
1.0
87.5
-65 to +200
2.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
PNP
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=Rated VCBO
- 0.1
ICEO
VCE=Rated VCEO
- 1.0
ICEV
VCE=Rated VCEO, VBE=1.5V
- 0.1
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
- 2.0
IEBO
VEB=5.0V
- 1.0
BVCEO
IC=200mA (2N4904, 2N4913)
40 -
BVCEO
IC=200mA (2N4905, 2N4914)
60 -
BVCEO
IC=200mA (2N4906, 2N4915)
80 -
VCE(SAT) IC=2.5A, IB=250mA
- 1.0
VCE(SAT) IC=5.0A, IB=1.0A
- 1.5
VBE(ON)
VCE=2.0V, IC=2.5A
- 1.4
hFE
VCE=2.0V, IC=2.5A
25 100
hFE
VCE=2.0V, IC=5.0A
7.0 -
hfe
VCE=10V, IC=500mA, f=1.0kHz
40 -
fT
VCE=10V, IC=1.0A, f=1.0MHz
4.0 -
NPN
MIN MAX
- 1.0
- 1.0
- 1.0
- 2.0
- 1.0
40 -
60 -
80 -
- 1.0
- 1.5
- 1.4
25 100
7.0 -
20 -
4.0 -
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
mA
V
V
V
V
V
V
MHz
R1 (7-March 2013)