2N4859 Datasheet, PDF (1/2 Pages) New Jersey Semi-Conductor Products, Inc. – N-CHANNEL JUNCTION FIELD-EFFECT

2N4859
2N4859A
N-CHANNEL
SILICON JFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4859 and
2N4859A are N-Channel silicon JFETs designed for
analog switching and chopper applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Reverse Gate-Source Voltage
Forward Gate Current
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
SYMBOL
VDS
VDG
VGSR
IGF
PD
TJ, Tstg
30
30
30
50
360
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IGSS
VGS=15V, VDS=0
IGSS
VGS=15V, VDS=0, TA=150°C
IDSS
VDS=15V, VGS=0
50
ID(OFF)
VDS=15V, VGS=10V
ID(OFF)
VDS=15V, VGS=10V, TA=150°C
BVGSS
IG=1.0μA, VDS=0
30
VGS(OFF) VDS=15V, ID=0.5nA
4.0
VDS(ON)
ID=20mA, VGS=0
rDS(ON)
VGS=0, ID=0, f=1.0kHz
Crss
VGS=10V, VDS=0, f=1.0MHz (2N4859)
Crss
VGS=10V, VDS=0, f=1.0MHz (2N4859A)
Ciss
VGS=10V, VDS=0, f=1.0MHz (2N4859)
Ciss
VGS=10V, VDS=0, f=1.0MHz (2N4859A)
td
VDD=10V, VGS(OFF)=10V, ID=20mA (2N4859)
td
VDD=10V, VGS(OFF)=10V, ID=20mA (2N4859A)
tr
VDD=10V, VGS(OFF)=10V, ID=20mA
toff
VDD=10V, VGS(OFF)=10V, ID=20mA (2N4859)
toff
VDD=10V, VGS(OFF)=10V, ID=20mA (2N4859A)
MAX
0.25
0.5
0.25
0.5
10
0.75
25
8.0
4.0
18
10
6.0
5.0
3.0
25
20
UNITS
V
V
V
mA
mW
°C
UNITS
nA
μA
mA
nA
μA
V
V
V
Ω
pF
pF
pF
pF
ns
ns
ns
ns
ns
R0 (11-June 2012)