2N4410 Datasheet, PDF (1/2 Pages) ON Semiconductor – Amplifier Transistor(NPN Silicon)

2N4410
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4410 is a small
signal NPN silicon transistor, manufactured by the
epitaxial planar process, designed for general purpose
amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
Θ_JC
120
80
5.0
250
625
-65 to +150
200
83.3
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=100V
ICBO
VCB=100V, TA=100°C
IEBO
VEB=4.0V
BVCBO
IC=10μA
120
BVCEX
VBE=5.0V, IC=500μA, RBE=8.2kΩ
120
BVCEO
IC=1.0mA
80
BVEBO
IE=10μA
5.0
VCE(SAT) IC=1.0mA, IB=100μA
VBE(SAT) IC=1.0mA, IB=100μA
VBE(ON)
VCE=5.0V, IC=1.0mA
hFE
VCE=1.0V, IC=1.0mA
60
hFE
VCE=1.0V, IC=10mA
60
fT
VCE=10V, IC=10mA, f=20MHz
60
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
MAX
10
1.0
100
200
800
800
400
300
12
50
UNITS
V
V
V
mA
mW
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
mV
mV
mV
MHz
pF
pF
R0 (18-October 2010)