2N4296_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN POWER TRANSISTORS

2N4296
2N4298
2N4299
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4296, 2N4298,
and 2N4299 devices are silicon NPN power transistors
designed for power amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
_JC
2N4296 2N4298 2N4299
350
500
350
250
350
250
4.0
1.0
250
20
-65 to +175
7.5
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N4296
2N4298
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=150V, VBE=1.5V, TC=135°C
- 600
- 600
ICBO
VCB=350V
- 100
--
ICBO
VCB=500V
--
- 100
IEBO
VBE=4.0V
- 100
- 100
BVCEO
IC=50mA
200 -
350 -
VCE(SAT) IC=50mA, IB=5.0mA
- 0.9
- 0.9
VBE(SAT) IC=50mA, IB=5.0mA
- 1.5
- 1.5
VBE(ON)
VCE=10V, IC=100mA
- 0.9
- 0.9
hFE
VCE=10V, IC=5.0mA
35 -
20 -
hFE
VCE=10V, IC=50mA
50 150 25 75
hFE
VCE=10V, IC=100mA
35 -
20 -
fT
VCE=10V, IC=20mA, f=5.0MHz
20 -
20 -
Ccb
VCB=100V, IC=0, f=0.1 to 1.0MHz
- 6.0
- 6.0
ton
VCC=100V, IC=100mA, IB1=IB2=10mA
- 7.0
- 7.0
toff
VCC=200V, IC=100mA, IB1=IB2=10mA
- 10
- 10
IS/b
VCE=200V
75 -
75 -
2N4299
MIN MAX
- 600
- 100
--
- 100
250 -
- 0.75
- 1.5
- 0.9
35 -
50 150
35 -
20 -
- 6.0
- 7.0
- 10
75 -
UNITS
V
V
V
A
mA
W
°C
°C/W
UNITS
μA
μA
μA
μA
V
V
V
V
MHz
pF
μs
μs
mA
R1 (2-September 2014)