2N4237 Datasheet, PDF (1/2 Pages) Boca Semiconductor Corporation – GENERAL PURPOSE TRANSISTOR (NPN SILICON)

2N4237
2N4238
2N4239
NPN SILICON TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4237,
2N4238, and 2N4239 are Silicon NPN Transistors,
in a hermetically sealed metal case designed for
power amplifier, power driver and switching power
supply applications.
JEDEC TO-39 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
VCBO
VCEO
VEBO
IC
IB
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
Θ_JC
2N4237
50
40
6.0
3.0
0.5
6.0
2N4238
80
60
6.0
3.0
0.5
6.0
-65 to +200
2N4239
100
80
6.0
3.0
0.5
6.0
UNITS
V
V
V
A
A
W
°C
29.2
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB= Rated VCBO
ICEV
VCE=45V, VEB=1.5V (2N4237)
ICEV
VCE=75V, VEB=1.5V (2N4238)
ICEV
VCE=90V, VEB=1.5V (2N4239)
ICEV
VCE=30V, VEB=1.5V, TC=150°C (2N4237)
ICEV
VCE=50V, VEB=1.5V, TC=150°C (2N4238)
ICEV
VCE=70V, VEB=1.5V , TC=150°C (2N4239)
ICEO
VCE= Rated VCEO
IEBO
VEB=6.0V
BVCEO
IC= 100mA (2N4237)
40
BVCEO
IC= 100mA (2N4238)
60
BVCEO
IC= 100mA (2N4239)
80
VCE(SAT)
IC= 500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=0.1A
VBE(SAT)
IC=1.0A, IB=0.1A
VBE(ON)
VCE=1.0V, IC=250mA
MAX
0.1
0.1
0.1
0.1
1.0
1.0
1.0
0.7
0.5
0.3
0.6
1.5
1.0
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
R1 (22-February 2007)