2N4033_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

2N4033
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4033 type is a
PNP silicon transistor manufactured by the epitaxial
planar process, designed for high current general
purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
80
80
5.0
1.0
1.25
7.0
-65 to +200
140
20
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
ICBO
VCB=60V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA
80
BVCEO
IC=10mA
80
BVEBO
IE=10μA
5.0
VCE(SAT) IC=150mA, IB=15mA
VCE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=150mA, IB=15mA
VBE(ON) VCE=0.5V, IC=500mA
hFE
VCE=5.0V, IC=0.1mA
75
hFE
VCE=5.0V, IC=100mA
100
hFE
VCE=5.0V, IC=500mA
70
hFE
VCE=5.0V, IC=1.0A
25
fT
VCE=10V, IC=50mA
100
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
ton
IC=500mA, IB1=50mA
ts
IC=500mA, IB1=IB2=50mA
tf
IC=500mA, IB1=IB2=50mA
MAX
50
50
10
0.15
0.50
0.90
1.10
300
400
20
110
100
350
50
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
UNITS
nA
μA
μA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
R1 (15-March 2012)