2N3963_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTOR

2N3963
2N3964
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964
are silicon PNP transistors designed for general purpose
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (TC=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JC
Θ_JA
2N3963
80
2N3964
45
80
45
6.0
200
1.2
360
-65 to +200
146
486
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3963
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=70V
-
10
ICBO
VCB=40V
-
-
ICES
VCE=70V
-
10
ICES
VCE=40V
-
-
IEBO
VEB=4.0V
-
10
BVCBO
IC=10μA
80
-
BVCES
IC=10μA
80
-
BVCEO
IC=5.0mA
80
-
BVEBO
IE=10μA
6.0
-
VCE(SAT) IC=10mA, IB=0.5mA
-
0.25
VCE(SAT) IC=50mA, IB=5.0mA
-
0.40
VBE(SAT) IC=10mA, IB=0.5mA
-
0.90
VBE(SAT) IC=50mA, IB=5.0mA
-
0.95
hFE
VCE=5.0V, IC=1.0μA
60
-
hFE
VCE=5.0V, IC=10μA
100
300
hFE
VCE=5.0V, IC=10μA, TA=-55°C
40
-
hFE
VCE=5.0V, IC=100μA
100
-
hFE
VCE=5.0V, IC=1.0mA
100
450
hFE
VCE=5.0V, IC=1.0mA, TA=100°C
-
600
hFE
VCE=5.0V, IC=10mA
100
-
hFE
VCE=5.0V, IC=50mA
90
-
hFE
VCE=5.0V, IC=50mA, TA=-55°C
45
-
2N3964
MIN MAX
-
-
-
10
-
-
-
10
-
10
45
-
45
-
45
-
6.0
-
-
0.25
-
0.40
-
0.90
-
0.95
180
-
250 500
100
-
250
-
250 600
-
800
200
-
180
-
90
-
UNITS
V
V
V
mA
W
mW
°C
°C/W
°C/W
UNITS
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
V
R0 (17-May 2013)