2N3947_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTOR

2N3947
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3947 is a silicon
NPN transistor designed for general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JC
Thermal Resistance
Θ_JA
60
40
6.0
200
360
1.2
-65 to +200
146
486
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEX
VCE=40V, VEB=3.0V
ICEX
VCE=40V, VEB=3.0V, TA=150°C
BVCBO
IC=10μA
60
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
0.6
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=1.0V, IC=0.1mA
60
hFE
VCE=1.0V, IC=1.0mA
90
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=50mA
40
fT
VCE=20V, IC=10mA, f=100MHz
300
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=1.0V, IC=0, f=1.0MHz
MAX
10
15
0.2
0.3
0.9
1.0
300
4.0
8.0
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
V
V
V
V
MHz
pF
pF
R0 (24-March 2014)