2N3905_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

2N3905
2N3906
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3905 and
2N3906 types are PNP silicon transistors designed for
general purpose amplifier and switching applications.
NPN complementary types are 2N3903 and 2N3904.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
40
40
5.0
200
625
-65 to +150
200
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICEV
VCE=30V, VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=1.0mA
BVEBO
IE=10μA
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
hFE
VCE=1.0V, IC=0.1mA
hFE
VCE=1.0V, IC=1.0mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=50mA
hFE
VCE=1.0V, IC=100mA
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
fT
VCE=20V, IC=10mA, f=100MHz
Cob
VCB=5.0V, IE=0, f=100kHz
Cib
VEB=0.5V, IC=0, f=100kHz
NF
VCE=5.0V, IC=100μA, RS=1.0kΩ
f=10Hz to 15.7kHz
ton
VCC=3.0V, VBE(OFF)=0.5V, IC=10mA
IB1=1.0mA
toff
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
2N3905
MIN MAX
-
50
40
-
40
-
5.0
-
-
0.25
-
0.4
0.65 0.85
-
0.95
30
-
40
-
50
150
30
-
15
-
50
200
200
-
-
4.5
-
10
-
5.0
-
70
-
260
2N3906
MIN MAX
-
50
40
-
40
-
5.0
-
-
0.25
-
0.4
0.65 0.85
-
0.95
60
-
80
-
100 300
60
-
30
-
100 400
250
-
-
4.5
-
10
UNITS
nA
V
V
V
V
V
V
V
MHz
pF
pF
-
4.0
dB
-
70
ns
-
300
ns
R2 (17-October 2011)