2N3867_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON PNP TRANSISTOR

2N3867
SILICON
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3867 is a silicon
PNP power transistor designed for high speed switching
and amplifier applications.
MARKING: FULL PART NUMBER
TO-5 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
_JC
_JA
40
40
4.0
3.0
10
0.5
6.0
1.0
-65 to +200
29
175
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=40V, TC=150°C
ICEX
VCE=40V, VBE=2.0V
BVCEO
IC=20mA
40
BVEBO
IE=100μA
4.0
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=1.5A, IB=150mA
VCE(SAT) IC=2.5A, IB=250mA
VBE(SAT) IC=500mA, IB=50mA
VBE(SAT) IC=1.5A, IB=150mA
0.9
VBE(SAT) IC=2.5A, IB=250mA
hFE
VCE=1.0V, IC=500mA
50
hFE
VCE=2.0V, IC=1.5A
40
hFE
VCE=3.0V, IC=2.5A
25
hFE
VCE=5.0V, IC=3.0A
20
fT
VCE=5.0V, IC=100mA, f=20MHz
60
Cob
VCB=10V, IE=0, f=100kHz
Cib
VEB=3.0V, IC=0, f=100kHz
td
VCC=30V, VBE(off)=0
tr
IC=1.5A, IB1=150mA
ts
VCC=30V, IC=1.5A
tf
IB1=IB2=150mA
MAX
150
1.0
0.5
0.75
1.3
1.0
1.4
2.0
200
120
1000
35
65
325
75
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
UNITS
μA
μA
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
R0 (8-May 2013)