2N3859A_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTOR

2N3859A
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3859A is a
silicon NPN transistor designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
60
60
6.0
100
625
1.5
-65 to +150
200
83.3
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=6.0V
BVCBO
IC=100μA
60
BVCEO
IC=1.0mA
60
BVEBO
IE=100μA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=10mA, IB=1.0mA
hFE
VCE=4.5V, IC=2.0mA
100
hFE
VCE=1.0V, IC=10mA
100
fT
VCE=10V, IC=2.0mA
90
Cob
VCB=10V, IE=0, f=1.0MHz
rb’Cc
VCE=10V, IC=2.0mA
MAX
50
100
125
780
200
250
4.0
150
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
nA
V
V
V
mV
mV
MHz
pF
ps
R0 (8-December 2014)