2N3811_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON DUAL PNP TRANSISTORS

2N3811
2N3811A
SILICON
DUAL PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3811 and 2N3811A
are dual silicon PNP transistors manufactured by the
epitaxial planar process utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
60
60
5.0
50
500
600
-65 to +200
UNITS
V
V
V
mA
mW
mW
°C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
10
nA
IEBO
VEB=4.0V
20
nA
BVCBO
IC=10μA
60
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10μA
5.0
V
VCE(SAT) IC=100μA, IB=10μA
0.20
V
VCE(SAT) IC=1.0mA, IB=100μA
0.25
V
VBE(SAT) IC=100μA, IB=10μA
0.70
V
VBE(SAT) IC=1.0mA, IB=100μA
0.80
V
VBE(ON)
VCE=5.0V, IC=100μA
0.70
V
hFE
VCE=5.0V, IC=1.0μA
75
hFE
VCE=5.0V, IC=10μA
225
hFE
VCE=5.0V, IC=100μA
300
900
hFE
VCE=5.0V, IC=500μA
300
900
hFE
VCE=5.0V, IC=1.0mA
300
900
hFE
VCE=5.0V, IC=10mA
250
fT
VCE=5.0V, IC=500μA, f=30MHz
30
MHz
fT
VCE=5.0V, IC=1.0mA, f=100MHz
100
500
MHz
Cob
VCB=5.0V, IE=0, f=100kHz
4.0
pF
Cib
VBE=0.5V, IC=0, f=100kHz
8.0
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
10
hre
VCE=10V, IC=1.0mA, f=1.0kHz
40
Ω
25
x10^-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
300
900
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
60
μS
NF
VCE=10V, IC=100μA, RG=3.0kΩ,
f=100Hz, BW=20Hz
4.0
dB
R0 (31-January 2014)