2N3798_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON PNP TRANSISTORS

2N3798 2N3798A
2N3799 2N3799A
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3798, 2N3799
series devices are silicon PNP epitaxial planar transistors
designed for low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
2N3798
2N3799
2N3798A
2N3799A
UNITS
Collector-Base Voltage
VCBO
60
90
V
Collector-Emitter Voltage
VCEO
60
90
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
50
mA
Power Dissipation
PD
360
mW
Power Dissipation (TC=25°C)
PD
1.2
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
_JA
0.49
°C/mW
Thermal Resistance
_JC
150
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
10
nA
ICBO
VCB=50V, TA=150°C
10
μA
IEBO
VEB=4.0V
20
nA
BVCBO
IC=10μA (2N3798, 2N3799)
60
V
BVCBO
IC=10μA (2N3798A, 2N3799A)
90
V
BVCEO
IC=10mA (2N3798, 2N3799)
60
V
BVCEO
IC=10mA (2N3798A, 2N3799A)
90
V
BVEBO
IE=10μA
5.0
V
VCE(SAT) IC=100μA, IB=10μA
0.20
V
VCE(SAT) IC=1.0mA, IB=100μA
0.25
V
VBE(SAT) IC=100μA, IB=10μA
0.70
V
VBE(SAT) IC=1.0mA, IB=100μA
0.80
V
VBE(ON)
VCE=5.0V, IC=100μA
0.70
V
2N3798
2N3799
2N3798A
2N3799A
MIN MAX
MIN MAX
hFE
VCE=5.0V, IC=1.0μA
-
-
75
-
hFE
VCE=5.0V, IC=10μA
100
-
225
-
hFE
VCE=5.0V, IC=100μA
150
-
300
-
hFE
VCE=5.0V, IC=100μA, TA=-55°C 75
-
150
-
hFE
VCE=5.0V, IC=500μA
150 450
300 900
hFE
VCE=5.0V, IC=1.0mA
hFE
VCE=5.0V, IC=10mA
150
-
125
-
300
-
250
-
R1 (22-September 2014)