2N3789_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON PNP POWER TRANSISTORS

2N3789 2N3791
2N3790 2N3792
SILICON
PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3789, 2N3790,
2N3791, and 2N3792 are silicon PNP power transistors,
manufactured by the epitaxial planar process, designed
for medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
_JC
2N3789
2N3791
60
2N3790
2N3792
80
60
80
7.0
10
4.0
150
-65 to +200
1.17
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N3789
2N3791
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEO, VEB=1.5V
- 1.0
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
- 5.0
IEBO
VEB=7.0V
- 5.0
BVCEO IC=200mA
60 -
VCE(SAT) IC=4.0A, IB=400mA (2N3789, 2N3790)
- 1.0
VCE(SAT) IC=5.0A, IB=500mA (2N3791, 2N3792)
- 1.0
VBE(ON) VCE=2.0V, IC=5.0A (2N3789, 2N3790)
- 2.0
VBE(ON) VCE=2.0V, IC=5.0A (2N3791, 2N3792)
- 1.8
VBE(ON) VCE=4.0V, IC=10A
- 4.0
hFE
VCE=2.0V, IC=1.0A (2N3789, 2N3790)
25 90
hFE
VCE=2.0V, IC=1.0A (2N3791, 2N3792)
50 180
hFE
VCE=2.0V, IC=3.0A (2N3789, 2N3790)
15 -
hFE
VCE=2.0V, IC=3.0A (2N3791, 2N3792)
30 -
fT
VCE=10V, IC=500mA, f=1.0MHz
4.0 -
2N3790
2N3792
MIN MAX
- 1.0
- 5.0
- 5.0
80 -
- 1.0
- 1.0
- 2.0
- 1.8
- 4.0
25 90
50 180
15 -
30 -
4.0 -
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
V
V
MHz
R2 (31-July 2013)