2N3766 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

2N3766
2N3767
NPN SILICON
POWER TRANSISTOR
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types
are silicon NPN power transistors manufactured by the
epitaxial base process designed for power amplifier and
medium speed switching applications.
MARKING CODE: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ_JC
2N3766 2N3767
80
100
60
80
6.0
4.0
2.0
25
-65 to +200
7.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=Rated VCBO, VBE=1.5V
ICBO
VCB=Rated VCBO
ICEO
VCE=Rated VCEO
IEBO
VEB=6.0V
BVCEO
IC=100mA (2N3766)
60
BVCEO
IC=100mA (2N3767)
80
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(ON)
VCE=10V, IC=1.0A
hFE
VCE=5.0V, IC=50mA
30
hFE
VCE=5.0V, IC=500mA
40
hFE
VCE=10V, IC=1.0A
20
fT
VCE=10V, IC=500mA, f=10MHz
10
Cob
VCB=10V, IC=0, f=100KHz
MAX
10
10
500
500
1.0
2.5
1.5
160
50
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
μA
μA
μA
μA
V
V
V
V
V
MHz
pF
R1 (25-October 2007))