2N3740_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON PNP POWER TRANSISTORS

2N3740 2N3740A
2N3741 2N3741A
SILICON
PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3740 series
devices are silicon PNP power transistors manufactured
by the epitaxial base process designed for power
amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
2N3740
2N3741
2N3740A
2N3741A
60
80
60
80
7.0
4.0
10
2.0
25
-65 to +200
UNITS
V
V
V
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
ICEV
VCE=Rated VCEO, VBE=1.5V (2N3740, 2N3741)
VCE=Rated VCEO, VBE=1.5V (2N3740A, 2N3741A)
ICEV
VCE=40V, VBE=1.5V, TC=150°C (2N3740)
ICEV
ICEV
ICEV
VCE=40V, VBE=1.5V, TC=150°C (2N3740A)
VCE=60V, VBE=1.5V, TC=150°C (2N3741)
VCE=60V, VBE=1.5V, TC=150°C (2N3741A)
ICBO
VCB=Rated VCBO (2N3740, 2N3741)
ICBO
ICEO
ICEO
VCB=Rated VCBO (2N3740A, 2N3741A)
VCE=40V (2N3740)
VCE=40V (2N3740A)
ICEO
VCE=60V (2N3741)
ICEO
IEBO
IEBO
VCE=60V (2N3741A)
VEB=7.0V (2N3740, 2N3741)
VEB=7.0V (2N3740A, 2N3741A)
BVCEO IC=100mA (2N3740, 2N3740A)
60
BVCEO IC=100mA (2N3741, 2N3741A)
80
VCE(SAT) IC=1.0A, IB=125mA
VBE(ON) VCE=1.0V, IC=250mA
hFE
VCE=1.0V, IC=100mA
40
hFE
VCE=1.0V, IC=250mA
30
hFE
VCE=1.0V, IC=500mA
20
hFE
VCE=1.0V, IC=1.0A
10
hfe
VCE=10V, IC=50mA, f=1.0kHz
25
fT
VCE=10V, IC=100mA, f=1.0MHz
4.0
Cob
VCB=10V, IE=0, f=100kHz
MAX
100
100
1.0
0.5
1.0
0.5
100
100
1.0
1.0
1.0
1.0
0.5
100
0.6
1.0
200
UNITS
μA
nA
mA
mA
mA
mA
μA
nA
mA
μA
mA
μA
mA
nA
V
V
V
V
MHz
100
pF
R2 (2-September 2014)