2N3738_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN POWER TRANSISTOR

2N3738
2N3739
SILICON
NPN POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3738 and 2N3739
are silicon epitaxial NPN power transistors designed for
high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
_JC
2N3738
250
2N3739
325
225
300
6.0
1.0
2.0
0.5
1.0
20
-65 to +200
7.5
UNITS
V
V
V
A
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=250V, VBE=1.5V (2N3738)
ICEV
VCE=300V, VBE=1.5V (2N3739)
ICEV
VCE=125V, VBE=1.5V, TC=100°C (2N3738)
ICEV
VCE=200V, VBE=1.5V, TC=100°C (2N3739)
ICEO
VCE=125V (2N3738)
ICEO
VCE=200V (2N3739)
IEBO
VEB=6.0V
BVCEO IC=5.0mA, (2N3738)
225
BVCEO IC=5.0mA, (2N3739)
300
VCE(SAT) IC=250mA, IB=25mA
VBE(ON) VCE=10V, IC=100mA
hFE
VCE=10V, IC=50mA
30
hFE
VCE=10V, IC=100mA
40
hFE
VCE=10V, IC=250mA
25
hfe
VCE=20V, IC=100mA, f=1.0kHz
35
fT
VCE=10V, IC=100mA, f=10MHz
10
Cob
VCB=100V, IE=0, f=100kHz
MAX
0.1
0.5
0.5
1.0
1.0
0.25
0.25
0.1
2.5
1.0
200
20
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
MHz
pF
R1 (2-September 2014)