2N3724_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

2N3724
2N3725
2N3725A
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3724, 2N3725,
2N3725A types are Silicon NPN Planar Epitaxial
Transistors designed for high voltage, high current,
high speed switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
PD
TJ, Tstg
2N3724
50
30
0.8
3.5
2N3725 2N3725A
80
80
50
50
6.0
1.2
1.75
0.8
1.0
3.5
5.0
-65 to +200
UNITS
V
V
V
A
A
W
W
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3724
2N3725
SYMBOL
TEST CONDITIONS
MIN MAX MIN MAX
IB
IB
ICBO
ICBO
ICBO
ICBO
ICES
ICES
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VCE=50V
VCE=80V
VCB=40V
VCB=40V, TA=100°C
VCB=60V
VCB=60V, TA=100°C
VCE=50V
VCE=80V
IC=10µA
IC=10µA
IC=10mA
IE=10µA
IC=10mA, IB=1.0mA
IC=100mA, IB=10mA
IC=300mA, IB=30mA
IC=500mA, IB=50mA
IC=800mA, IB=80mA
IC=1.0A, IB=100mA
IC=10mA, IB=1.0mA
IC=100mA, IB=10mA
IC=300mA, IB=30mA
IC=500mA, IB=50mA
IC=800mA, IB=80mA
IC=1.0A, IB=100mA
- 10
-
-
- 1.7
- 120
-
-
-
-
- 10
-
-
50 -
50 -
30 -
6.0 -
- 0.25
- 0.20
- 0.32
- 0.42
- 0.65
- 0.75
- 0.76
- 0.86
- 1.1
0.80 1.1
- 1.5
- 1.7
-
-
- 10
-
-
-
-
- 1.7
- 120
-
-
- 10
80 -
80 -
50 -
6.0 -
- 0.25
- 0.26
- 0.40
- 0.52
- 0.80
- 0.95
- 0.76
- 0.86
- 1.1
0.80 1.1
- 1.5
- 1.7
2N3725A
MIN MAX
-
-
-
10
-
-
-
-
- 0.5
-
50
-
-
-
10
80
-
80
-
50
-
6.0 -
- 0.25
- 0.26
- 0.40
- 0.52
- 0.80
- 0.90
- 0.76
- 0.86
- 1.0
0.80 1.1
- 1.3
0.90 1.4
UNITS
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
R1 (5-December 2010)