2N3713 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,150W)

2N3713 2N3715
2N3714 2N3716
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,
2N3715, and 2N3716 are silicon NPN power transistors
manufactured by the epitaxial-base process, mounted
in a hermetically sealed metal package designed for
medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
_JC
2N3713
2N3715
80
2N3714
2N3716
100
60
80
7.0
10
4.0
150
-65 to +200
1.17
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICEV
VCE=Rated VCBO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=7.0V
BVCEO
IC=200mA (2N3713, 2N3715)
60
BVCEO
IC=200mA (2N3714, 2N3716)
80
VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714)
VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716)
VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714)
VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716)
VBE(ON)
VCE=2.0V, IC=3.0A
hFE
VCE=2.0V, IC=1.0A (2N3713, 2N3714)
40
hFE
VCE=2.0V, IC=1.0A (2N3715, 2N3716)
50
hFE
VCE=2.0V, IC=3.0A (2N3713, 2N3714)
15
hFE
VCE=2.0V, IC=3.0A (2N3715, 2N3716)
30
fT
VCE=10V, IC=0.5A, f=1.0MHz
4.0
tr
IC=5.0A, IB1=IB2=0.5A
0.4
ts
IC=5.0A, IB1=IB2=0.5A
0.3
tf
IC=5.0A, IB1=IB2=0.5A
0.4
MAX
1.0
10
5.0
1.0
0.8
2.0
1.5
1.5
120
150
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
V
V
V
MHz
μs
μs
μs
R2 (18-June 2013)