2N3707_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTORS

2N3707 2N3710
2N3708 2N3711
2N3709
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3707 series
devices are silicon NPN transistors designed for
low level, low noise (2N3707), low level, high gain
(2N3708, 2N3709, 2N3710, 2N3711) applications.
Recommended PNP complementary series is 2N4058
thru 2N4062.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
30
30
6.0
200
625
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=20V
IEBO
VEB=6.0V
BVCEO
IC=1.0mA
30
VCE(SAT) IC=10mA, IB=0.5mA
VBE(ON)
VCE=5.0V, IC=1.0mA
0.5
NF
VCE=5.0V, IC=100μA, RG=10KΩ,
BW=15.7kHz (2N3707 only)
MAX
100
100
1.0
1.0
5.0
UNITS
V
V
V
mA
mW
°C
UNITS
nA
nA
V
V
V
dB
SYMBOL
hFE
hFE
hfe
hfe
TEST CONDITIONS
VCE=5.0V, IC=100μA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=100μA, f=1.0kHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
2N3707
MIN MAX
100 400
--
100 550
--
2N3708
MIN MAX
--
45 660
--
45 800
2N3709
MIN MAX
--
45 165
--
45 250
2N3710
MIN MAX
--
90 330
--
90 450
2N3711
MIN MAX
--
180 660
--
180 800
R1 (13-March 2014)