2N3700_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTORS

2N3700
2N3701
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701
are silicon NPN transistors designed for high current
general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation (TC=25°C)
PD
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
140
80
7.0
1.0
1.8
500
-65 to +200
350
97.2
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3700
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=90V
-
10
ICBO
VCB=90V, TA=150°C
-
10
IEBO
VEB=5.0V
-
10
BVCBO
IC=100μA
140
-
BVCEO
IC=30mA
80
-
BVEBO
IE=100μA
7.0
-
VCE(SAT) IC=150mA, IB=15mA
-
0.2
VCE(SAT) IC=500mA, IB=50mA
-
0.5
VBE(SAT) IC=150mA, IB=15mA
-
1.1
hFE
VCE=10V, IC=0.1mA
50
-
hFE
VCE=10V, IC=10mA
90
-
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=150mA, TA=-55°C
40
-
hFE
VCE=10V, IC=500mA
50
-
hFE
VCE=10V, IC=1.0A
15
-
2N3701
MIN MAX
-
10
-
10
-
10
140
-
80
-
7.0
-
-
0.2
-
0.5
-
1.1
30
100
40
120
40
120
-
-
30
100
15
-
UNITS
V
V
V
A
W
mW
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
R1 (4-March 2014)