2N3637 Datasheet, PDF (1/2 Pages) Seme LAB – PNP SILICON TRANSISTOR

2N3637
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3637 is a PNP
Silicon Transistor, mounted in a hermetically sealed
TO-39 package, designed for general purpose amplifier
and high voltage switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
175
175
5.0
1.0
1.0
5.0
-65 to +200
175
35
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=100V
IEBO
VEB=3.0V
BVCBO
IC=100μA
175
BVCEO
IC=10mA
175
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
0.65
hFE
VCE=10V, IC=0.1mA
80
hFE
VCE=10V, IC=1.0mA
90
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=50mA
100
hFE
VCE=10V, IC=150mA
50
fT
VCE=30V, IC=30mA, f=100MHz
200
Cob
VCB=20V, IE=0, f=1.0MHz
Cib
VEB=1.0V, IC=0, f=1.0MHz
ton
VCC=100V, VBE=4.0V, IC=50mA,
IB1=IB2=5.0mA
toff
VCC=100V, VBE=4.0V, IC=50mA,
IB1=IB2=5.0mA
MAX
100
50
0.3
0.5
0.8
0.9
300
10
75
400
600
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R0 (22-November 2010)