2N3634_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON PNP TRANSISTORS

2N3634
2N3635
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635
are silicon PNP epitaxial planar transistors designed for
general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
140
140
5.0
1.0
1.0
5.0
-65 to +200
175
35
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=100V
IEBO
VEB=3.0V
BVCBO
IC=100μA
140
BVCEO
IC=10mA
140
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
0.65
fT
VCE=30V, IC=30mA, f=100MHz (2N3634) 150
fT
VCE=30V, IC=30mA, f=100MHz (2N3635) 200
Cob
VCB=20V, IE=0, f=1.0MHz
Cib
VEB=1.0V, IC=0, f=1.0MHz
NF
VCE=10V, IC=0.5mA, RS=1.0kΩ, f=1.0kHz
ton
VCC=100V, VBE=4.0V, IC=50mA
toff
IB1=IB2=5.0mA
MAX
100
50
0.3
0.5
0.8
0.9
10
75
3.0
400
600
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
dB
ns
ns
R1 (17-September 2013)