2N3583_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTORS

2N3583
2N3584
2N3585
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3583 series
devices are silicon NPN transistors designed for high
speed switching and high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
_JC
2N3583
250
175
6.0
1.0
2N3584
375
250
6.0
2.0
5.0
1.0
35
-65 to +200
5.0
2N3585
500
300
6.0
2.0
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N3583
2N3584
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICEV
VCE=225V, VEB=1.5V
- 1.0
--
ICEV
VCE=340V, VEB=1.5V
--
- 1.0
ICEV
VCE=450V, VEB=1.5V
--
--
ICEV
VCE=225V, VEB=1.5V, TC=150°C
- 3.0
--
ICEV
VCE=300V, VEB=1.5V, TC=150°C
--
- 3.0
ICEO
VCE=150V
- 10
- 5.0
IEBO
VBE=6.0V
- 5.0
- 0.5
BVCEO IC=200mA
175 -
250 -
VCE(SAT) IC=1.0A, IB=125mA
- 5.0
- 0.75
VBE(SAT) IC=1.0A, IB=100mA
--
- 1.4
VBE(ON) VCE=10V, IC=1.0A
- 1.4
- 1.4
hFE
VCE=10V, IC=100mA
40 -
40 -
hFE
VCE=10V, IC=500mA
40 200
--
hFE
VCE=2.0V, IC=1.0A
--
8.0 80
hFE
VCE=10V, IC=1.0A
10 -
25 100
fT
VCE=10V, IC=200mA, f=5.0MHz
10 -
10 -
Cob
VCB=10V, IE=0, f=1.0MHz
- 120
- 120
hfe
VCE=30V, IC=100mA, f=1.0kHz
25 350
--
tr
VCC=200V, IC=1.0A, IB1=100mA, RL=200Ω - -
- 3.0
ts
VCC=200V, IC=1.0A, IB1=IB2=100mA
--
- 4.0
tf
VCC=200V, IC=1.0A, IB1=IB2=100mA
--
- 3.0
IS/b
VCE=100V
350 -
350 -
2N3585
MIN MAX UNITS
--
mA
--
mA
- 1.0
mA
--
mA
- 3.0
mA
- 5.0
mA
- 0.5
mA
300 -
V
- 0.75
V
- 1.4
V
- 1.4
V
40 -
--
8.0 80
25 100
10 -
MHz
- 120
pF
--
- 3.0
μs
- 4.0
μs
- 3.0
μs
350 -
mA
R3 (2-September 2014)