2N3506_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

DATA SHEET
2N3506
2N3507
NPN SILICON TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3506, 2N3507 types are Silicon NPN Epitaxial Planar Transistors designed
for general purpose switching applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
2N3506
2N3507
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
PD
TJ,Tstg
Θ_JA
Θ_JC
60
80
` 40
50
5.0
3.0
1.0
5.0
-65 to +200
175
35
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
2N3506
MIN MAX
2N3507
MIN MAX
ICEV
ICEV
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VCE=40V, VEB(off)=4.0V
VCE=40V, VEB(off)=4.0V, TA=100°C
VCE=60V, VEB(off)=4.0V
VCE=60V, VEB(off)=4.0V, TA=100°C
IC=100µA
IC=10mA
IE=10µA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
1.0
150
60
40
5.0
0.5
1.0
1.5
1.0
0.9 1.4
2.0
1.0
150
80
50
5.0
0.5
1.0
1.5
1.0
0.9 1.4
2.0
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
UNITS
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
(Continued)
R1