2N3467_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON PNP TRANSISTORS

2N3467
2N3468
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3467 and
2N3468 are silicon PNP switching transistors designed
for core driver applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
2N3467
40
2N3468
50
40
50
5.0
1.0
1.0
5.0
-65 to +200
175
35
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3467
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=30V
-
100
ICBO
VCB=30V, TA=100°C
-
15
ICEV
VCE=30V, VBE=3.0V
-
100
IBEV
VCE=30V, VBE=3.0V
-
120
BVCBO
IC=10μA
40
-
BVCEO
IC=10mA
40
-
BVEBO
IE=10μA
5.0
-
VCE(SAT) IC=150mA, IB=15mA
-
0.3
VCE(SAT) IC=500mA, IB=50mA
-
0.5
VCE(SAT) IC=1.0A, IB=100mA
-
1.0
VBE(SAT) IC=150mA, IB=15mA
-
1.0
VBE(SAT) IC=500mA, IB=50mA
0.8
1.2
VBE(SAT) IC=1.0A, IB=100mA
-
1.6
hFE
VCE=1.0V, IC=150mA
40
-
hFE
VCE=1.0V, IC=500mA
40
120
hFE
VCE=5.0V, IC=1.0A
40
-
2N3468
MIN MAX
-
100
-
15
-
100
-
120
50
-
50
-
5.0
-
-
0.36
-
0.6
-
1.2
-
1.0
0.8
1.2
-
1.6
25
-
25
75
20
-
UNITS
V
V
V
A
W
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
V
V
R2 (26-July 2013)