2N3419 Datasheet, PDF (1/2 Pages) Microsemi Corporation – 3 Amp, 125V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS

2N3419
2N3420
2N3421
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3419, 2N3420,
and 2N3421 are silicon NPN transistors manufactured
by the epitaxial planar process, and designed for small
signal general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current (PW<1.0ms, D.C.<50%)
ICM
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N3420
85
2N3419
2N3421
125
60
80
8.0
3.0
5.0
1.0
1.0
15
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3420
SYMBOL TEST CONDITIONS
MIN MAX
ICEX
VCE=80V, VEB=0.5V
-
500
ICEX
VCE=120V, VEB=0.5V
-
-
ICEX
VCE=80V, VEB=0.5V, TC=150°C
-
50
ICEX
VCE=120V, VEB=0.5V, TC=150°C
-
-
IEBO
VEB=6.0V
-
500
IEBO
VEB=8.0V
-
10
BVCEO
IC=50mA
60
-
VCE(SAT) IC=1.0A, IB=100mA
-
0.25
VCE(SAT) IC=2.0A, IB=200mA
-
0.50
VBE(SAT) IC=1.0A, IB=100mA
0.6
1.2
VBE(SAT) IC=2.0A, IB=200mA
0.7
1.4
fT
VCE=10V, IC=100mA, f=20MHz
40
-
Cob
VCB=10V, IE=0, f=1.0MHz
-
150
ton
VEB(OFF)=3.7V, IC=1.0A,
-
300
toff
IB1=IB2=100mA, RL=20Ω
-
1.2
2N3419
2N3421
MIN MAX
-
-
-
500
-
-
-
50
-
500
-
10
80
-
-
0.25
-
0.50
0.6 1.2
0.7 1.4
40
-
-
150
-
300
-
1.2
UNITS
V
V
V
A
A
A
W
W
°C
UNITS
nA
nA
μA
μA
nA
μA
V
V
V
V
V
MHz
pF
ns
μs
R0 (24-March 2014)