2N3414_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTORS

2N3414
2N3415
2N3416
2N3417
MPS3414
MPS3415
MPS3416
MPS3417
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3414, MPS3414
series devices are silicon NPN transistors, manufactured
by the epitaxial planar process, designed for general
purpose and switching applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N3414
2N3415
MPS3414
MPS3415
25
2N3416
2N3417
MPS3416
MPS3417
50
25
50
5.0
500
625
1.5
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
IEBO
VEB=5.0V
BVCEO
IC=10mA (3414, 3415)
25
BVCEO
IC=10mA (3416, 3417)
50
VCE(SAT) IC=50mA, IB=3.0mA
VBE(SAT) IC=50mA, IB=3.0mA
hFE
VCE=4.5V, IC=2.0mA (3414, 3416)
75
hFE
VCE=4.5V, IC=2.0mA (3415, 3417)
180
hfe
VCE=4.5V, IC=2.0mA, f=1.0kHz (3414, 3416)
75
hfe
VCE=4.5V, IC=2.0mA, f=1.0kHz (3415, 3417) 180
MAX
100
100
0.3
0.85
225
540
UNITS
V
V
V
mA
mW
W
°C
UNITS
nA
nA
V
V
V
V
R3 (10-September 2013)