2N3250 Datasheet, PDF (1/2 Pages) Boca Semiconductor Corporation – GENERAL PURPOSE TRANSISTOR (PNP SILICON)

2N3250 2N3250A
2N3251 2N3251A
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3250, 2N3251
series devices are silicon PNP transistors designed for
small signal, general purpose switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
_JC
Thermal Resistance
_JA
2N3250
2N3251
50
2N3250A
2N3251A
60
40
60
5.0
200
360
1.2
-65 to +200
146
486
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=40V, VEB=3.0V
BVCBO
IC=10μA (2N3250, 2N3251)
50
BVCBO
IC=10μA (2N3250A, 2N3251A)
60
BVCEO
IC=10mA (2N3250, 2N3251)
40
BVCEO
IC=10mA (2N3250A, 2N3251A)
60
BVEBO
IE=10μA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
0.60
VBE(SAT) IC=50mA, IB=5.0mA
MAX
20
0.25
0.50
0.90
1.20
hFE
VCE=1.0V, IC=0.1mA
hFE
VCE=1.0V, IC=1.0mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=50mA
2N3250
2N3250A
MIN MAX
40
-
45
-
50
150
15
-
2N3251
2N3251A
MIN MAX
80
-
90
-
100 300
30
-
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
V
V
V
V
V
V
V
V
V
R1 (4-March 2014)