2N3114_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

2N3114
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3114 is a NPN
Silicon Transistor, mounted in a hermetically sealed
package, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
150
150
5.0
200
0.8
5.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=100V
ICBO
VCB=100V, TA=150°C
IEBO
VEB=4.0V
BVCBO
IC=100µA
150
BVCEO
IC=30mA
150
BVEBO
IE=100µA
5.0
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=10V, IC=0.1mA
15
hFE
VCE=10V, IC=30mA
30
hFE
VCE=10V, IC=30mA, TA=–55°C
12
fT
VCE=10V, IC=30mA, f=20MHz
40
Cob
VCB=20V, IE=0, f=140kHz
Cib
VEB=0.5V, IC=0, f=140kHz
MAX
10
10
100
1.0
0.9
120
9.0
80
UNITS
V
V
V
mA
W
W
°C
UNITS
nA
µA
nA
V
V
V
V
V
MHz
pF
pF
R0 (4-November 2010)