2N3055 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W)

2N3055 NPN
MJ2955 PNP
COMPLEMENTARY
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3055 and
MJ2955 are complementary silicon power transistors
manufactured by the epitaxial base process, mounted
in a hermetically sealed metal case, designed for
general purpose switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
IB
PD
TJ, Tstg
_JC
100
70
60
7.0
15
7.0
115
-65 to +200
1.52
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=100V, VEB=1.5V
ICEV
VCE=100V, VEB=1.5V, TC=150°C
ICEO
VCE=30V
IEBO
VEB=7.0V
BVCEO
IC=200mA
60
BVCER
IC=200mA, RBE=100Ω
70
VCE(SAT) IC=4.0A, IB=400mA
VCE(SAT) IC=10A, IB=3.3A
VBE(ON)
VCE=4.0V, IC=4.0A
hFE
VCE=4.0V, IC=4.0A
20
hFE
VCE=4.0V, IC=10A
5.0
hfe
VCE=4.0V, IC=1.0A, f=1.0kHz
15
fT
VCE=10V, IC=0.5A, f=1.0MHz
2.5
fhfe
VCE=4.0V, IC=1.0A, f=1.0kHz
10
Is/b
VCE=40V, t=1.0s
2.87
MAX
1.0
5.0
0.7
5.0
1.1
3.0
1.5
70
120
UNITS
V
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
mA
V
V
V
V
V
MHz
kHz
A
R1 (26-July 2013)