2N3054_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN POWER TRANSISTORS

2N3054
2N3054A
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A
devices are silicon NPN power transistors manufactured
by the epitaxial base process, mounted in a hermetically
sealed metal case, designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation (2N3054)
Power Dissipation (2N3054A)
Operating and Storage Junction Temperature
Thermal Resistance (2N3054)
Thermal Resistance (2N3054A)
SYMBOL
VCBO
VCEV
VCER
VCEO
VEBO
IC
IB
PD
PD
TJ, Tstg
_JC
_JC
90
90
60
55
7.0
4.0
2.0
25
75
-65 to +200
7.0
2.33
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=90V, VEB=1.5V
ICEV
VCE=90V, VEB=1.5V, TC=150°C
ICEO
VCE=30V
IEBO
VEB=7.0V
BVCEO IC=100mA
55
BVCER
IC=100mA, RBE=100Ω
60
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=3.0A, IB=1.0A
VBE(ON) VCE=4.0V, IC=500mA
hFE
VCE=4.0V, IC=500mA
25
hFE
VCE=4.0V, IC=3.0A
5.0
hfe
VCE=4.0V, IC=100mA, f=1.0kHz
25
fT
VCE=10V, IC=200mA, f=1.0MHz
3.0
fhfe
VCE=4.0V, IC=100mA
30
MAX
1.0
6.0
500
1.0
1.0
6.0
1.7
150
180
UNITS
V
V
V
V
V
A
A
W
W
°C
°C/W
°C/W
UNITS
mA
mA
μA
mA
V
V
V
V
V
MHz
kHz
R2 (2-September 2014)