2N3053_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTORS

2N3053
2N3053A
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3053, 2N3053A
types are epitaxial planar NPN silicon transistors
designed for general purpose applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JC
2N3053
60
2N3053A
80
40
60
5.0
0.7
5.0
-65 to +200
35
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3053
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=30V, VEB=1.5V
-
250
ICEV
VCE=60V, VEB=1.5V
-
-
IEBO
VEB=4.0V
-
250
BVCBO
IC=100μA
60
-
BVCER
IC=100mA, RBE=10Ω (Note 1)
50
-
BVCEO
IC=100mA (Note 1)
40
-
BVEBO
IE=100μA
5.0
-
VCE(SAT) IC=150mA, IB=15mA
-
1.4
VBE(SAT) IC=150mA, IB=15mA
-
1.7
VBE(ON)
VCE=2.5V, IC=150mA
-
1.7
hFE
VCE=2.5V, IC=150mA
25
-
hFE
VCE=10V, IC=150mA
50
250
fT
VCE=10V, IC=50mA, f=100MHz
100
-
Cob
VCB=10V, IE=0, f=1.0MHz
-
15
Cib
VBE=0.5V, IC=0, f=1.0MHz
-
80
Notes: (1) Pulse width < 300μs, duty cycle < 2%.
2N3053A
MIN MAX
-
-
-
250
-
250
80
-
70
-
60
-
5.0
-
-
0.3
0.6
1.0
-
1.0
25
-
50
250
100
-
-
15
-
80
UNITS
V
V
V
A
W
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
R2 (13-December 2013)