2N3019_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

2N3019
2N3020
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3019, 2N3020
types are NPN silicon transistors designed for general
purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
140
80
7.0
1.0
0.8
5.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3019
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=90V
-
10
ICBO
VCB=90V, TA=150°C
-
10
IEBO
VEB=5.0V
-
10
BVCBO
IC=100μA
140
-
BVCEO
IC=30mA
80
-
BVEBO
IE=100μA
7.0
-
VCE(SAT) IC=150mA, IB=15mA
-
0.2
VCE(SAT) IC=500mA, IB=50mA
-
0.5
VBE(SAT) IC=150mA, IB=15mA
-
1.1
hFE
VCE=10V, IC=100μA
50
-
hFE
VCE=10V, IC=10mA
90
-
hFE
VCE=10V, IC=150mA
100 300
hFE
VCE=10V, IC=150mA, TA=-55°C
40
-
hFE
VCE=10V, IC=500mA
50
-
hFE
VCE=10V, IC=1.0A
15
-
fT
VCE=10V, IC=50mA, f=20MHz
100
-
Cob
VCB=10V, IE=0, f=1.0MHz
-
12
Cib
VEB=0.5V, IC=0, f=1.0MHz
-
60
rb’Cc
VCE=10V, IC=10mA, f=4.0MHz
-
400
NF
VCE=10V, IC=100μA, f=1.0kHz,
RS=1.0kΩ
-
4.0
2N3020
MIN MAX
-
10
-
10
-
10
140
-
80
-
7.0
-
-
0.2
-
0.5
-
1.1
30
100
40
120
40
120
-
-
30
100
15
-
100
-
-
12
-
60
-
400
-
-
UNITS
V
V
V
A
W
W
°C
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
ps
dB
R1 (11-June 2012)