2N3011_15 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTOR

2N3011
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3011 is a silicon
epitaxial planar NPN transistor designed for ultra high
speed saturated switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (tp=10μs)
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
30
30
12
5.0
200
500
360
1.2
-65 to +200
486
146
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICES
VCE=20V
ICES
VCE=20V, TA=85°C
BVCBO
IC=10μA
30
BVCES
IC=10μA
30
BVCEO
IC=10mA
12
BVEBO
IE=100μA
5.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=10mA, IB=1.0mA, TA=85°C
VCE(SAT) IC=30mA, IB=3.0mA
VCE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=10mA, IB=1.0mA
720
VBE(SAT) IC=30mA, IB=3.0mA
VBE(SAT) IC=100mA, IB=10mA
hFE
VCE=0.35V, IC=10mA
30
hFE
VCE=0.4V, IC=30mA
25
hFE
VCE=1.0V, IC=100mA
12
MAX
400
10
200
300
250
500
870
1.15
1.6
120
UNITS
V
V
V
V
mA
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
V
V
V
V
mV
mV
mV
mV
mV
V
V
R0 (25-February 2015)