2N2920_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON DUAL NPN TRANSISTORS

2N2920
2N2920A
SILICON
DUAL NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2920 and 2N2920A
are dual silicon NPN transistors manufactured by the
epitaxial planar process utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
Power Dissipation (One Die, TC=25°C)
Power Dissipation (Both Dice, TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
PD
TJ, Tstg
60
60
6.0
30
300
500
750
1.5
-65 to +200
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
ICBO
VCB=45V
2.0
ICEO
VCE=5.0V
2.0
IEBO
VEB=5.0V
2.0
BVCBO
IC=10μA
60
BVCEO
IC=10mA
60
BVEBO
IE=10μA
6.0
VCE(SAT) IC=1.0mA, IB=100μA
0.35
VBE(ON)
VCE=5.0V, IC=100μA
0.70
hFE
VCE=5.0V, IC=10μA
150
600
hFE
VCE=5.0V, IC=10μA, TA=-55°C
40
hFE
VCE=5.0V, IC=100μA
225
hFE
VCE=5.0V, IC=1.0mA
300
fT
VCE=5.0V, IC=500μA, f=20MHz
60
Cob
VCB=5.0V, IE=0, f=140kHz
6.0
NF
VCE=5.0V, IC=10μA, RS=10kΩ,
f=1.0kHz, BW=200Hz
3.0
UNITS
V
V
V
mA
mW
mW
mW
W
°C
UNITS
nA
nA
nA
V
V
V
V
V
MHz
pF
dB
R1 (4-April 2014)