2N2906_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

2N2906 2N2906A
2N2907 2N2907A
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2906, 2N2907
series types are silicon PNP epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
2N2906
2N2907
60
2N2906A
2N2907A
60
40
60
5.0
600
400
1.8
-65 to +200
438
97
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2906
2N2907
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=50V
-
20
ICBO
VCB=50V, TA=150°C
-
20
ICEV
VCE=30V, VEB=0.5V
-
50
BVCBO
IC=10μA
60
-
BVCEO
IC=10mA
40
-
BVEBO
IE=10μA
5.0
-
VCE(SAT)
IC=150mA, IB=15mA
-
0.4
VCE(SAT)
IC=500mA, IB=50mA
-
1.6
VBE(SAT)
IC=150mA, IB=15mA
-
1.3
VBE(SAT)
IC=500mA, IB=50mA
-
2.6
fT
VCE=20V, IC=50mA, f=100MHz
200
-
Cob
VCB=10V, IE=0, f=1.0MHz
-
8.0
Cib
VEB=2.0V, IC=0, f=1.0MHz
-
30
ton
VCC=30V, IC=150mA, IB1=15mA
-
45
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA -
100
2N2906A
2N2907A
MIN MAX
-
10
-
10
-
50
60
-
60
-
5.0
-
-
0.4
-
1.6
-
1.3
-
2.6
200
-
-
8.0
-
30
-
45
-
100
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
R4 (30-January 2012)