2N2904 Datasheet, PDF (1/3 Pages) Seme LAB – GENERAL PURPOSE PNP TRANSISTOR

2N2904 2N2904A
2N2905 2N2905A
PNP SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2904, 2N2905
series types are PNP silicon transistors manufactured
by the epitaxial planar process, designed for small
signal, general purpose and switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N2904
2N2905
60
2N2904A
2N2905A
60
40
60
5.0
0.6
0.8
3.0
-65 to +200
2N2904
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
2N2905
MIN MAX
ICBO
VCB=50V
-
20
ICEV
VCE=30V, VEB=0.5V
-
-
BVCBO
IC=10μA
60
-
BVCEO
IC=10mA
40
-
BVEBO
IE=10μA
5.0
-
VCE(SAT) IC=150mA, IB=15mA
-
0.4
VCE(SAT) IC=500mA, IB=50mA
-
1.6
VBE(SAT) IC=150mA, IB=15mA
-
1.3
VBE(SAT) IC=500mA, IB=50mA
-
2.6
2N2904
2N2904A
MIN MAX
hFE
VCE=10V, IC=100μA (2N2904, 2N2905)
20
-
hFE
VCE=10V, IC=100μA (2N2904A, 2N2905A) 40
-
hFE
VCE=10V, IC=1.0mA (2N2904, 2N2905)
25
-
hFE
VCE=10V, IC=1.0mA (2N2904A, 2N2905A) 40
-
hFE
VCE=10V, IC=10mA (2N2904, 2N2905)
35
-
hFE
VCE=10V, IC=10mA (2N2904A, 2N2905A) 40
-
hFE
VCE=10V, IC=150mA
40
120
hFE
VCE=10V, IC=500mA (2N2904, 2N2905) 20
-
hFE
VCE=10V, IC=500mA (2N2904A, 2N2905A) 40
-
2N2904A
2N2905A
MIN MAX
-
10
-
50
60
-
60
-
5.0
-
-
0.4
-
1.6
-
1.3
-
2.6
2N2905
2N2905A
MIN MAX
35
-
75
-
50
-
100
-
75
-
100
-
100 300
30
-
50
-
UNITS
V
V
V
A
W
W
°C
UNITS
nA
nA
V
V
V
V
V
V
V
R2 (6-April 2015)