2N2895_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTORS

2N2895
2N2896
2N2897
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2895, 2N2896,
and 2N2897 are silicon NPN epitaxial planar transistors
designed for small signal, general purpose applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N2895
120
80
65
2N2896
140
140
90
7.0
1.0
500
1.8
-65 to +200
2N2897
60
60
45
UNITS
V
V
V
V
A
mW
W
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2895
2N2896
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICBO
VCB=60V
- 2.0
- 10
ICBO
VCB=60V, TA=150°C
- 2.0
-
-
ICBO
VCB=90V
-
-
- 10
ICBO
VCB=90V, TA=150°C
-
-
- 10
IEBO
VEB=5.0V
- 5.0
- 10
BVCBO
IC=100μA
120 -
140 -
BVCER
IC=100mA, RBE=10Ω
80 -
140 -
BVCEO
IC=100mA
65 -
90 -
BVEBO
IE=100μA
7.0 -
7.0 -
VCE(SAT) IC=150mA, IB=15mA
- 0.6
- 0.6
VBE(SAT) IC=150mA, IB=15mA
- 1.2
- 1.2
hFE
VCE=10V, IC=10μA
10 -
-
-
hFE
VCE=10V, IC=100μA
20 -
-
-
hFE
VCE=10V, IC=1.0mA
-
-
35 -
hFE
VCE=10V, IC=10mA
35 -
-
-
hFE
VCE=10V, IC=10mA, TA=-55°C
20
-
20 -
hFE
VCE=10V, IC=150mA
40 120
60 200
hFE
VCE=10V, IC=500mA
25 -
-
-
2N2897
MIN MAX
- 50
- 50
-
-
-
-
- 50
60 -
60 -
45 -
7.0 -
- 1.0
- 1.3
-
-
-
-
35 -
-
-
-
-
50 200
-
-
UNITS
nA
μA
nA
μA
nA
V
V
V
V
V
V
R0 (6-August 2013)