2N2857_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON RF TRANSISTORS

2N2857
2N3839
NPN SILICON RF TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839
are silicon NPN RF transistors designed for VHF/UHF
amplifier, oscillator and converter applications.
MARKING: FULL PART NUMBER
TO-72 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
30
15
2.5
40
200
300
-65 to +200
UNITS
V
V
V
mA
mW
mW
°C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N2857
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=15V
-
10
ICBO
VCB=15V, TA=150°C
-
1.0
BVCBO
IC=1.0μA
30
-
BVCEO
IC=3.0mA
15
-
BVEBO
IE=10μA
2.5
-
hFE
VCE=1.0V, IC=3.0mA
30
150
fT
VCE=6.0V, IC=5.0mA, f=100MHz
1.0
1.9
Cob
VCB=10V, IE=0, f=100kHz to 1.0MHz
-
1.0
Po
VCB=10V, IC=12mA, f=500MHz
30
-
Gpe
VCE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω 12.5
19
NF
VCE=6.0V, IC=1.5mA, f=450MHz, RS=50Ω
-
4.5
rb’Cc
VCB=6.0V, IC=2.0mA, f=31.9MHz
4.0
15
2N3839
MIN MAX
-
10
-
1.0
30
-
15
-
2.5
-
30
150
1.0
2.0
-
1.0
30
-
12.5 19
-
3.9
1.0
15
UNITS
nA
μA
V
V
V
GHz
pF
mW
dB
dB
ps
R1 (31-January 2013)