2N2411 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP SILICON TRANSISTOR

DATA SHEET
2N2411
2N2412
PNP SILICON TRANSISTOR
JEDEC TO-18 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed
for high speed switching applications.
MAXIMUM RATINGS:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ,Tstg
Θ_JA
Θ_JC
SYMBOL
ICES
ICES
IEBO
BVCBO
BVCEO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hfe
Cob
Cib
TEST CONDITIONS
VCE=15V
VCE=15V, TA=150°C
VEB=5.0V
IC=10µA
IC=10mA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=0.5V, IC=50µA
VCE=0.5V, IC=10mA
VCE=0.5V, IC=10mA, TA=-55°C
VCE=1.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
25
15
5.0
100
0.5
1.2
-65 to +200
350
146
2N2411
MIN MAX
10
10
25
15
0.2
0.7 0.9
10
20
60
10
10
1.4
5.0
8.0
2N2412
MIN MAX
10
10
10
25
15
0.2
0.7 0.9
20
40 120
20
20
1.4
5.0
8.0
UNITS
V
V
V
mA
W
W
°C
°C/W
°C/W
UNITS
nA
µA
µA
V
V
V
V
pF
pF
(CONTINUED ON REVERSE SIDE)
R0