2N2405_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SILICON NPN TRANSISTOR

2N2405
SILICON
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2405 is a silicon
NPN epitaxial planar transistor designed for small signal
general purpose switching applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEV
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation (TC=25°C)
PD
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
120
140
120
90
7.0
1.0
5.0
1.0
-65 to +200
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=90V
ICBO
VCB=90V, TC=150°C
IEBO
VEB=5.0V
BVCBO
IC=100μA
120
BVCER
IC=100mA, RBE=10Ω
140
BVCER
IC=100mA, RBE=500Ω
120
BVCEO
IC=100mA
90
BVEBO
IE=100μA
7.0
VCE(SAT) IC=50mA, IB=5.0mA
VCE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=150mA, IB=15mA
hFE
VCE=10V, IC=100μA
20
hFE
VCE=10V, IC=10mA
35
hFE
VCE=10V, IC=150mA
60
fT
VCE=10V, IC=50mA, f=20MHz
120
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VEB=0.5V, IC=0, f=1.0MHz
MAX
10
10
10
0.2
0.5
0.9
1.1
200
15
85
UNITS
V
V
V
V
V
A
W
W
°C
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
MHz
pF
pF
R0 (2-December 2013)