2N2369A Datasheet, PDF (1/2 Pages) STMicroelectronics – HIGH-SPEED SATURATED SWITCH

2N2369A
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2369A is an
epitaxial planar NPN Silicon Transistor designed for
ultra high speed saturated switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
ICM
PD
PD
TJ, Tstg
Θ_JA
Θ_JC
40
40
15
4.5
200
500
360
1.2
-65 to +200
486
146
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=20V
ICBO
VCB=20V, TA=150°C
BVCBO
IC=10µA
40
BVCES
IC=10µA
40
BVCEO
IC=10mA
15
BVEBO
IE=10µA
4.5
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=10mA, IB=1.0mA, TA=125°C
VCE(SAT) IC=30mA, IB=3.0mA
VCE(SAT) IC=100mA, IB=10mA
VBE(SAT) IC=10mA, IB=1.0mA
700
VBE(SAT) IC=30mA, IB=3.0mA
VBE(SAT) IC=100mA, IB=10mA
hFE
VCE=0.35V, IC=10mA
40
hFE
VCE=0.35V, IC=10mA, TA=–55°C
20
hFE
VCE=0.4V, IC=30mA
30
hFE
VCE=1.0V, IC=100mA
20
MAX
400
30
200
300
250
500
850
1.15
1.6
120
UNITS
V
V
V
V
mA
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
µA
V
V
V
V
mV
mV
mV
mV
mV
V
V
R0 (10-March 2011)