2N2322 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

2N2322
2N2323
2N2324
2N2325
2N2326
2N2327
2N2328
2N2329
SILICON CONTROLLED RECTIFIER
1.6 AMPS, 25 THRU 400 VOLTS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2322
Series types are hermetically sealed Silicon
Controlled Rectifiers designed for sensing
circuit applications and control systems.
TO-39 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL 22 23
Peak Repetitive Forward Voltage
VDRM 25 50
Peak Repetitive Reverse Voltage
VRRM 25 50
Non-Repetitive Peak Reverse Voltage VRSM 40 75
RMS On-State Current
IT(RMS)
Average On-State Current (TC=85°C) IT(AV)
Peak One Cycle Surge (t=8.3ms)
ITSM
Peak Gate Power
PGM
Average Gate Power
PG(AV)
Peak Gate Current
IGM
Peak Gate Voltage
VGM
Junction Temperature
TJ
Storage Temperature
Tstg
2N23__
24 25 26 27 28 29 UNITS
100 150 200 250 300 400 V
100 150 200 250 300 400 V
150 225 300 350 400 500 V
1.6
A
1.0
A
15
A
0.10
W
0.01
W
0.10
A
6.0
V
-65 to +125
°C
-65 to +150
°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IDRM, IRRM Rated VDRM, VRRM, RGK=1.0kΩ
5.0
IGT
VD=6.0V, RL=100Ω
200
IH
VD=6.0V, RGK=1.0kΩ
2.0
VGT
VD=6.0V, RL=100Ω
0.8
VTM
ITM=1.0A, tp=380μs
1.5
UNITS
μA
μA
mA
V
V
R0 (11-December 2008)