2N2270_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

2N2270
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2270 is a NPN
silicon transistor, mounted in a hermetically sealed
package, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JA
Thermal Resistance
Θ_JC
60
60
45
7.0
1.0
1.0
5.0
-65 to +200
175
35
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
ICBO
VCB=60V, (TC=150°C)
IEBO
VEB=5.0V
BVCBO
IC=100μA
60
BVCER
IC=100mA, RBE=10Ω
60
BVCEO
IC=100mA
45
BVEBO
IE=100μA
7.0
VCE(SAT) IC=150mA, IB=15mA
VBE(SAT) IC=150mA, IB=15mA
hFE
VCE=10V, IC=1.0mA
30
hFE
VCE=10V, IC=150mA
50
hfe
VCE=10V, IC=5.0mA, f=1.0kHz
50
fT
VCE=10V, IC=50mA
100
Cob
VCB=10V, IE=0
Cib
VBE=0.5V, IC=0
NF
VCE=10V, IC=0.3mA, f=1.0kHz,
RG=1.0kΩ, BW=1.0Hz
MAX
50
50
100
0.9
1.2
200
275
15
80
10
UNITS
V
V
V
V
A
W
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
dB
R0 (17-August 2012)