2N2223_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SILICON DUAL NPN TRANSISTORS

2N2223
2N2223A
SILICON
DUAL NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A
are dual silicon NPN transistors manufactured by the
epitaxial planar process utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCER
VCEO
VEBO
IC
PD
PD
TJ, Tstg
100
80
60
7.0
500
500
600
-65 to +200
UNITS
V
V
V
V
mA
mW
mW
°C
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
ICBO
VCB=80V
10
ICBO
VCB=80V, TA=150°C
15
IEBO
VEB=5.0V
10
BVCBO
IC=100μA
100
BVCER
IC=100mA, REB=10Ω
80
BVCEO
IC=30mA
60
BVEBO
IE=100μA
7.0
VCE(SAT)
VBE(SAT)
hFE
hFE
IC=50mA, IB=5.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
1.2
0.9
15
25
150
hFE
VCE=5.0V, IC=10mA
50
200
fT
VCE=10V, IC=50mA, f=20MHz
50
Cob
VCB=10V, IE=0, f=1.0MHz
15
Cib
VBE=0.5V, IC=0, f=1.0MHz
85
hib
VCB=5.0V, IC=1.0mA, f=1.0kHz
20
30
hrb
VCB=5.0V, IC=1.0mA, f=1.0kHz
3.0
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
40
200
hob
VCB=5.0V, IC=1.0mA, f=1.0kHz
0.5
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
Ω
x10^-4
μS
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
hFE1/hFE2 (Note 1) VCE=5.0V, IC=100μA
|VBE1-VBE2|
VCE=5.0V, IC=100μA
Notes: (1) The lowest reading is taken as hFE1.
2N2223
MIN MAX
0.8
1.0
-
15
2N2223A
MIN MAX
0.9
1.0
-
5.0
UNITS
mV
R0 (22-January 2014)